Details, datasheet, quote on part number: 2N6520
CategoryDiscrete => Transistors => Bipolar => High Voltage => PNP
DescriptionPNP Epitaxial Silicon Transistor
CompanyFairchild Semiconductor
DatasheetDownload 2N6520 datasheet
Cross ref.Similar parts: BF421
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Features, Applications

Collector-Emitter Voltage: VCEO= -350V Collector Dissipation: PC (max)=625mW Complement to 2N6517

Absolute Maximum Ratings Ta=25C unless otherwise noted

Symbol VCBO VCEO VEBO PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25 Junction Temperature Storage Temperature

Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC= -100A, IE=0 IC= -1mA, IB=0 IE= -10A, IC=0 VCB= -250V, IE=0 VEB= -4V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA VCE= -10V, IC= -100mA VCE= -20V, IC= -10mA, f=20MHz VCB= IE=0, f=1MHz VEB= IC=0, f=1MHz VBE (off)= -2V, VCC= -100V IC= IB1= -10mA VCC= -100V, IC= IB1=IB2= -10mA Min. Max. Units V nA

Base-Emitter On Voltage * Current Gain Bandwidth Product Output Capacitance Emitter-Base Capacitance Turn On Time Turn Off Time

Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage


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