Details, datasheet, quote on part number: CMM6025-AH
PartCMM6025-AH
CategoryAnalog & Mixed-Signal Processing => Amplifiers => High Dynamic Range Amplifiers
DescriptionDriver Amplifiers Mmic, .25-6.0 GHZ
CompanyCeleritek
DatasheetDownload CMM6025-AH datasheet
  

 

Features, Applications

Advanced Product Information April of 4) Features to 6.0 GHz Frequency Range 43 dBm Output 1.7 dB Noise Figure 18.0 dB Gain 25 dBm P1dB LGA Package Single Power Supply Single Input Matching Applications Wireless Local Loop Transmit and Receive UNII Transmit and Receive Dual Band 802.11 WLAN Description

The is a high dynamic range amplifier designed for applications operating within the to 6.0 GHz frequency range. is an ideal solution for numerous transmit and receive functions in wireless local loop (WLL) and UNII applications where high linearity is required. The amplifier has the flexibility of being optimized for a number of wireless applications. is an ideal solution when used as a driver amplifier in applications including cellular and PCS (personal communications service) operating from to 2.2 GHz; MMDS (multichannel multipoint distribution systems) operating from to 2.7 GHz; WLAN (wireless LAN) operating at 2.4 GHz; WLL (wireless local loop) operating at 3.5 GHz; and HiperLAN (high performance LAN) and U-NII (unlicensed national information infrastructure) operating from to 6.0 GHz. The CMM6025-AH is packaged in a low-cost, space efficient, Land Grid Array (LGA) package which provides excellent electrical stability and low thermal resistance. All devices are 100% RF and DC tested. With single input matching the part simplifies design by keeping board space and cost to a minimum.

Unless otherwise specified, the following specifications are guaranteed at room temperature in a Celeritek test fixture.

Frequency Range Gain Input Return Loss Output IP3 Noise Figure Output P1dB Operating Current Range Supply Voltage

Notes: = 22C, Vdd = 5.0, Frequency = 800 MHz, 50 Ohm system 2. Thermal resistance = 50C/W.
Parameter Rating Parameter Rating Parameter Rating
Operation of this device above any of these parameters may cause damage.

Typical Performance (50 Ohm System) Frequency Gain Input Return Loss Output Return Loss OIP3 Noise Figure Bias 2.1 GHz dB 40 dBm 2.95 dB Vds 370 mA

IP3 measured with 2 tones at an output power of 5 dBm/tone separated by 10 MHz Gain, Input Return Loss and Output Return Loss vs Frequency

3236 Scott Boulevard, Santa Clara, California 95054 Phone: (408) 986-5060 Fax: (408) 986-5095
Advanced Product Information - April 2002 Application Circuit (5.8 GHz)

Typical Performance (50 Ohm System) Frequency Gain Input Return Loss Output Return Loss OIP3 Noise FIgure Bias 5.8 GHz dB 40 dBm 3.8 dB Vds = 5V, Ids 370 mA

IP3 measured with 2 tones at an output power of 5 dBm/tone separated by 10 MHz
Gain, Input Return Loss and Output Return Loss vs Frequency

 

Some Part number from the same manufacture Celeritek
NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FETSUPER LOW NOISE FIGURE ANDHIGH ASSOCIATED GAIN:NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V,ID = 10 mA, f = 12 GHz
NE3508M04 L to S BAND LOW NOISE AMPLIFIERN-CHANNEL HJ-FETFEATURES- Super Low Noise Figure & Associated Gain :NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA- Flat-lead 4-pin tin-type super mini-mold(M04)
NE3509M04 L to S Band Low Noise Amplifier N-Channel HJ-FET- Super Low Noise Figure & Associated Gain :NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA- Flat-lead 4-pin tin-type super mini-mold(M04) package
NE52418 LOW NOISE AMPLIFIER NPN GaAs HBTNEC's NE52418 is a low cost NPN GaAs HBT(InGaP)suitable for front end LNA's in L/S band mobile communicationsapplications. The NE52418 is housed in a 4-pin supermini-mold
NE650103M 10 W, L & S-Band Power GaAs MESFETNEC's NE650103M is a 10 W GaAs MESFET designed forPCS, W-CDMA, WLL transmitter applications. It is capable ofdelivering 10 Watts of output power with high linear
NE5511279A NEC's 7.5 V UHF Band RF Power Silicon LD-MOSFET NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems.
NE5520279A NEC's 3.2 V, 2 W, L&S Band Medium Power Silicon LD-MOSFETNEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power amplifier for mobile and fixed wireless
NE552R479A NEC's 3.0 V, 0.25 W, L&S Band Medium Power Silicon LD-MOSFETNEC's NE552R479A is an N-Channel silicon power laterallydiffused MOSFET specially designed as the transmission power amplifier for mobile
NE55410G N-Channel Silicon Power LDMOS FET For 2 W + 10 W VHF to L-Band Single-End Power AmplifierThe NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular
NE58219 NPN Silicon Expitaxial Transistor 3 Pins Ultra Super Mini MoldNEC's NE58219 is a low supply voltage transistor designed forUHF Mixer and oscillator applications. The 3 pin ultra supermini mold package
NE662M16 NPN Silicon High Frequency TransistorNEC's NE662M16 is fabricated using NEC's UHS0 25 GHz fTwafer process. With a typical transition frequency of 25 GHzthe NE662M16 is usable in applications from
NE664M04 NEC's Medium Power NPN Silicon High Frequency TransistorNEC's NE664M04 is fabricated using NEC's state-of-the-artUHS0 25 GHz fT wafer process. With a transition frequency of20 GHz, the NE664M04 is usable
NE677M04 NEC's NE677M04 is fabricated using NEC's HFT3 waferprocess. With a transition frequency of 15 GHz, the NE677M04is usable in applications from 100 MHz to 3 GHz. The NE677M04provides P1dB of 15 dBm,
NE678M04 NEC's NE678M04 is fabricated using NEC's HFT3 waferprocess. With a transition frequency of 12 GHz, the NE678M04is usable in applications from 100 MHz to 3 GHz. The NE678M04provides P1dB of 18 dBm,
NE685M33 LOW NOISE:NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz INSERTION POWER GAIN:|S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
NE687M33 NEC's NPN Silicon TransistorLOW NOISE:NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
NE851M03 NEC's NPN Silicon TransistorNEC's NE851M03 transistor is designed for oscillator applicationsup to 3 GHz. The NE851M03 features low voltage operation, low phase noise, and high immunty to pushing effects.NEC's
NE851M13 NEC's NPN Silicon TransistorNEC's NE851M13 transistor is designed for oscillator applicationsup to 3 GHz. The NE851M13 features low voltageoperation, low phase noise, and high immunty to pushingeffects.
NE894M13 NPN Silicon TransistorNEC's NE894M13 transistor is designed for oscillator applicationsabove 3 GHz. The NE894M13 features low voltage, lowcurrent operation, low noise, and high gain. NEC's new lowprofile/flat
NESG2021M05 NEC's NPN SiGe High Frequency TransistorNEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise
NESG2021M16 NEC's NPN SiGe High Frequency TransistorNEC's NESG2021M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise

CFB0103 : GaAs Discrete GAAS Fets, 1-18 GHZ

CFK0301 : Discrete Low-noise GAAS Fets, 800 MHz-2 GHZ

NE3503M04 : HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz

NE5511279A-T1A-A : NEC's 7.5 V UHF Band RF Power Silicon LD-MOSFET NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using NEC's NEWMOS1 technology and housed in a surface mount package. This

UPG2022TB : NEC's 4.8 to 5.85 GHz High Power GaAs MMIC SPDT Switch NEC's UPG2022TB is a high power GaAs MMIC SPDT (Single Pole Double Throw) switch. This device can operate from 4.8 to 5.85 GHz with low insertion loss. It is housed in a compact, lead free 6-pin super minimold package.

PS8741 : For Optical DAA, High Linear 16 PIN SOP Photocoupler

PS7142L-1C : 8 PIN DIP 400 V Breakdown Voltage, Transfer Type 2-CH Optical Coupler MOSFET The PS7142-1C and PS7142L-1C are transfer type solid state relays containing normally open (N.O.) contact and normally close (N.C.) contact on output side. They are suitable for analog signal control because of their low

PS7801E-1A-F4 : 4-Pin Ultra Small Flat-Lead, Low C x R, 1-ch Optical The PS7801E-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output side.

Same catergory

ADM812 : Power. Microprocessors Supervisory Circuit in 4-Lead SOT-143, Logic High Reset Output.

AN6150 : Speech Network Circuit. The is an integrated circuit designed for telephone speech network. It has the basic function necessary to apply a sound signal onto the line and is applicable for various types of handsets. Wide operating voltage range to 11.5V Built-in amplifiers for "Dial Tone" and "DTMF" Amplifier output switchable. Each amplifier gain automatically changeable depending.

HA-2512/883 : High Slew Rate op Amps. The is a high performance operational amplifier which sets the standards for maximum slew rate and wide bandwidth operation in moderately powered, internally compensated, monolithic devices. In addition to excellent dynamic characteristics, this dielectrically isolated amplifier also offers low offset current and high input impedance. The 50V/s minimum.

HCPL-7800 : ISOlation Amplifier. 15 kV/s Common-Mode Rejection at VCM 1000 V Compact, Auto-Insertable Standard 8-pin DIP Package 0.00025 V/V/C Gain Drift vs. Temperature 0.3 mV Input Offset Voltage 100 kHz Bandwidth 0.004% Nonlinearity Worldwide Safety Approval: 1577 (3750 Vrms /1 min.) and CSA, VDE 0884 (pending) Advanced Sigma-Delta A/D Converter Technology Fully Differential Circuit.

INA110BG : Fast-settling Fet-input Instrumentation Amplifier. LOW BIAS CURRENT: 50pA max FAST SETTLING: to 0.01% HIGH CMR: 106dB min; at 10kHz INTERNAL GAINS: VERY LOW GAIN DRIFT: to 50ppm/C LOW OFFSET DRIFT: 2V/C APPLICATIONS q MULTIPLEXED INPUT DATA ACQUISITION SYSTEM q FAST DIFFERENTIAL PULSE AMPLIFIER q HIGH SPEED GAIN BLOCK q AMPLIFICATION OF HIGH IMPEDANCE SOURCES The is a versatile monolithic FET-input.

LA4270 : 6 W Dual-channel Power Amp. High-output dual-channel AF Power IC. f=1kHz, THD=1.0%) Low distortion f=1kHz, PO=2W). Minimum number of external parts requierd (no bootstrap capacitor requierd). Low pop noise at the time of power switch ON/OFF. High ripple rejection (58dB typ). Wide supply voltage range to 32V). On-chip protector against abnormality (thermal shutdown, overvoltage).

LA8522M : . The is an I/O switching audio signal-processing IC for use in facsimile units and telephones. It integrates a crosspoint switch, a BTL power amplifier, an electronic volume control, a microphone amplifier, and other functions on a single chip. Built-in electronic volume (seven 4.0 dB steps) Two output level switching circuits (4 positions and 2 positions).

LMC6084LM : Precision CMOS Quad Operational Amplifier. The is a precision quad low offset voltage operational amplifier, capable of single supply operation. Performance characteristics include ultra low input bias current, high voltage gain, rail-to-rail output swing, and an input common mode voltage range that includes ground. These , plus its low offset voltage, make the LMC6084 ideally suited for precision.

MAX4541 : Low-Voltage, Single-Supply, Dual, Spst/spdt Analog Switches. Low-Voltage, Single-Supply Dual SPST/SPDT Analog Switches The MAX4541MAX4544 are precision, dual analog switches designed to operate from a single to +12V supply. Low power consumption (5W) makes these parts ideal for battery-powered equipment. These switches offer low leakage currents (100pA max) and fast switching speeds (tON = 150ns max, tOFF = 100ns.

TGA8286 : 8 - 10.5 GHZ Power Amplifier. to 10.5 GHz Frequency Range, X-band Two Stage 5-W HFET Power Amplifier 37% P.A.E. 3 dB Gain Compression 17 dB Small Signal Gain Bias can be applied from either the upper or lower edges x 0.004 in.) The TriQuint is a GaAs monolithic amplifier designed for use as an X-band power amplifier. A 2.4mm and a 9.6mm HFET provide 16 dB nominal gain from to 10.5.

TLV2371 : . TLV2374, TLV2375 FAMILY 550-A/Ch 3-MHz RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN Rail-To-Rail Input/Output Wide Bandwidth. 3 MHz High Slew Rate. 2.4 V/s Supply Voltage Range. 16 V Supply Current. 550 A/Channel Low Power Shutdown Mode IDD(SHDN). 25 A/Channel Input Noise Voltage. 39 nV/Hz Input Bias Current. 1 pA Specified Temperature.

ZL40120 : = Low Power, Current Feedback, Quad Operational Amplifier ;; Package Type = N/a ;; No. Of Pins = 14.

CGY1041 : 1 GHz, 21 DB Gain GaAs Push-pull Amplifier Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies..

MAX5394 : Single, 256-Tap Volatile, SPI, Low-Voltage Linear Taper Digital Potentiometer The MAX5394 single, 256-tap volatile, low-voltage linear taper digital potentiometer offers three end-to-end resistance values of 10k?, 50k?, and 100k?. Potentiometer terminals are independent of supply for voltages up to 5.25V with single-supply operation from 1.7V to 5.5V.

 
0-C     D-L     M-R     S-Z