Details, datasheet, quote on part number: CMM0014-BD
CategoryRF & Microwaves => GaAs MMIC Chips
TitleGaAs MMIC Chips
DescriptionWideband Devices, 2 GHZ to 24 GHZ
DatasheetDownload CMM0014-BD datasheet
Find where to buy


Features, Applications

Advanced Product Information April 2003 Features Small Size: x 92 mils High Gain Directly Cascadable Medium Power: +23 dBm Ion-Implanted Active Layers Silicon Nitride Passivation

Frequency Range Small Signal Gain Flatness Input/Output VSWR Power Output (@1 dB Gain Compression) Second Order Intercept Point Third Order Intercept Point Current

Die Attach: Eutectic die attach is recommended. For eutectic die attach: Preform: AuSn (80% Au, 20% Sn); Stage Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1 min or less. Wire Bonding: Wire Size: to 1.0 mil in diameter (prestressed); Thermocompression bonding is preferred over thermosonic bonding. For thermocompression bonding: Stage Temperature: 250°C; Bond Tip Temperature: 150°C; Bonding Tip Pressure: to 40 gms depending on size of wire.

Drain Voltage Drain Current Continuous Power Dissipation Channel Temperature Storage Temperature Mounting Temperature Input Power

The CMM-0014-BD is available in bare die and is shipped in Gel Pak. Part Number for Ordering Package CMM0014-BD Bare Die

Celeritek reserves the right to make changes without further notice to any products herein. Celeritek makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Celeritek assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Celeritek does not convey any license under its patent rights nor the rights of others. Celeritek products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Celeritek product could create a situation where personal injury or death may occur. Should Buyer purchase or use Celeritek products for any such unintended or unauthorized application, Buyer shall indemnify and hold Celeritek and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Celeritek was negligent regarding the design or manufacture of the part. Celeritek is a registered trademark of Celeritek, Inc. Celeritek, Inc. is an Equal Opportunity/Affirmative Action Employer.

3236 Scott Boulevard, Santa Clara, California 95054 Phone: (408) 986-5060 Fax: (408) 986-5095


Some Part number from the same manufacture Celeritek
CMM0016-BD GAAS Mmic 1W Poweramplifier Broadband Amplifier Chips 2 GHZ to 18 GHZ
CMM0224-BD Wideband Devices, 2 GHZ to 24 GHZ
CMM0330 Cellular RF ic Mmic Power Amplifiers, 824-928 MHZ
CMM0335 GSM RF ic Power Amplifiers, 890-915 MHZ
CMM0336 Cellular RF ic Mmic Power Amplifiers, 824-928 MHZ
CMM1321 PCS RF ic Mmic Power Amps, 1.85-1.91 GHZ
CMM1335 GSM RF ic Power Amplifiers, 1.7-1.91 GHZ
CMM1430-KU ku Band Products, 13.75-14.5 GHZ
CMM1530 PCS RF ic Mmic Power Amps, 1.85-1.91 GHZ
CMM2030-BD Fiber Optic Driver Amplifier, 30 KHZ to 30 GHZ
CMM2032-BD Fiber Optic Driver Amplifier, 30 KHZ to 32 GHZ
CMM2301 Ism Band Mmic Power Amplifier, 2.3-2.5 GHZ
CMM2305 Cellular RF ic Mmic Power Amplifiers, 800-2700 MHZ
CMM2311 Ism Band RF ic Products, 800-2700 MHZ

CMM0336-AK-000T : MMIC Power Amps Cellular RF ic Mmic Power Amplifiers, 824-928 MHZ

CMM1530 : PCS RF ic Mmic Power Amps, 1.85-1.91 GHZ

CMM6004-SC : High Dynamic Range Amplifier, 0.25-3.0 GHZ

CMM6025-AH : Driver Amplifiers Mmic, .25-6.0 GHZ

NESG3031M05-T1 : NPN SiGe RF Transistor For Low Noise, High-Gain Amplification Flat-Lead 4-PIN Thin-Type Super Minimold FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VC

UPB1512TU : NEC's 13 GHz Input Divide by 8 Prescaler IC for Satellite Communications NEC's UPB1512TU is a silicon germanium (SiGe) monolithic integrated circuit designed as a divide by 8 prescaler IC for satellite communications and point-to-point/multi-point radios.

MC-7847-KC-AZ : NEC's 870 MHz GaAs CATV 25 dB Power Doubler Amplifier (Higher Current Version For Higher Distortion Performance) NEC's MC-7847-KC is a GaAs Multi-Chip Modules designed for use as output stages in CATV applications up to 870 MHz. This is a high gain device offering 25 dB minimum gain at 870 MHz. B

MC7894 : 1 GHz CATV 25 dB Power Doubler Amplifier - NCSD Preliminary Version The MC-7894 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low distortion, low noise figure and return loss across the entire frequency band. Reliability and performance uniformity ar

PS7801-C-F3 : NEC's 4-PIN Ultra Small Flat-Lead Super Low Output Capacitance, 1-CH Optical Coupled MOS FET

Same catergory

1SV271 : Diode ( VHF~uhf Band RF Attenuator Applications ).

as211-334 : Phemt GAAS ic SPDT Switch DC 4 GHZ. dB +30 dBm Typical IP3 43 dBm Typical +3 V Low Insertion Loss @ 0.9 GHz) Low DC Power Consumption 0.8 mm Land Grid Array (LGA) Package PHEMT Process The an IC FET SPDT switch in a low cost miniature LGA package. The AS211-334 low insertion loss and positive voltage operation with very low DC power consumption. Parameter Switching Characteristics1 Condition.

EMDC-17-5-75 :  E-Series SMT 75 Ohm 17 DB Coupler 5 - 1000 MHZ. Coupling 17db Typical Surface Mount Tape and Reel Packaging available M/A-COM's a 75 Ohm Coupler, in a low cost, surface mount package.The EMDC-17-5-75 is ideally suited for use in high volume CATV applications. *Notes: 1.Core is coated with Paralyene C, 0.005" thick minimum. 2.Wire is heavy poly-nylon coated, rated to 180C. M/A-COM Division of AMP Incorporated.

FHX04LG : HEMT. C, X/Ku, K-band Low Noise Hemts. Low Noise Figure: (Typ.)@f=12GHz (FHX04) High Associated Gain: = 200µm Gold Gate Metallization for High Reliability Cost Effective Ceramic Microstrip (SMT) Package Tape and Reel Packaging Available The is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range.The devices.

KGL4225D : 14-Gbps 1:16 Mux. KGL 4225D converts 16bit parallel data into one data stream operating over 14GHz clock frequency. The KGL 4225D is fabricated by OKI 0.18 µm gate length GaAs MESFETs process. By usin g of OKI unique flip-flops, which are MCFF (Memory Cell type Flip Flop), high speed operation has been realized. Capacitive coupling is recommended for clock input connection.

MABAES0034 :  E-Series SMT 4:1 RF Transformer 20 - 1000 MHZ. M/A-COM's 4:1 RF transformer in a low cost, surface mount package. Ideally suited for high volume cellular and wireless applications. Function Primary dot Primary CT Secondary dot Secondary CT Case Ground Not Connected Pin No. Parameter RF Power DC Current Storage Temperature Absolute Maximum to +100°C Note: photograph above indicates package only ,not.

MC13190FC : MC13190 Advance Information Data Sheet: 2.4 GHZ Short-Range, Low Power Transceiver.

PA1131 : LNAs. 850-900 Mhz, Ultra Linear Amplifier. High IP3. 49.0 dBm. High Pout @ 1dB. comp +33.0 dBm. Low Noise Figure.2.5 dB. Low Cost Parame te r Frequency Gain Flatness Reverse Isolation Pout @ 1dB. comp. Noise Figure IP3 VSWR Supply Req'd Typical Value M in. Value ±0.5 M ax. Value 9 00 Units MHz. dB. v./mA. dBm. dB. dBm. IP3 measured with 2 tones @ +15 dBm. per tone , 1 Mhz apart Min and max values.

RM806 : pa Module For Tdma Amps (824 849 MHz). Power Amplifier Module for TDMA AMPS (824­849 MHz) The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount Distinguishing module designed for Time Division Multiple Access (TDMA) and Advanced Mobile Low voltage positive bias supply Phone Service (AMPS) mobile units operating in the 824-849 MHz cellular bandwidth. Good linearity.

SD1729 : HF Transistors. HF SSB Applications RF & Microwave Transistors. OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD 30 dB COMMON EMITTER GOLD METALLIZATION POUT 130 W PEP WITH 12 dB GAIN The is a Class 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (T case ° C) Collector-Base.

START450 : NPN Silicon RF Transistor. COMPRESSION POINT @ 1.8GHz TRANSITION FREQUENCY 42GHz HIGH LINEARITY ULTRA MINIATURE SOT343(SC70) PACKAGE The is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo).

TG2006F : RF Cell Packs. Package = SM8 ;; Application = Power Amp (PHS).

UPC8158K : Agc/up-converter With iq Modulator. BUILT-IN LPF: Suppresses spurious multipled by TX local (LO1) AGC AMPLIFIER INSTALLED IN LOCAL PORT OF UPCONVERTER: GCR 35 dB MIN. @ fout = 1.5 GHz EXCELLENT PERFORMANCE: Padj = -65dBc TYP. = ±50 KHz, EVM = 1.2 %rms TYP. EXTERNAL IF FILTER: Can be applied between modulator output and up converter input terminal The is a silicon microwave monolithic.

ATA5275 : Integrated 1.5 A peak current BCDMOS antenna driver IC dedicated as a 125 kHz wake-up channel transmitter for TPM applications.

SP8782 : 1 GHz Divide 16/17, Divide 32/33 Multi-Modulus Divider The SP8782 is a multi-modulus divider which divides by 16/17 when the Ratio Select input is low and by 32/33 when the Ratio Select input is high. When high, the modulus Control input selects the lower division ration (16 or 32) and the higher ratio (17 or 33) when it is low. The device uses resynchronisation.

RI-I03-114A-01 : Texas Instruments Tag-it™ HF-I standard transponder inlays consist of 13.56-MHz high-frequency (HF) transponders that are compliant with the ISO/IEC 15693 and ISO/IEC 18000-3 global open standards. These products offer a user-accessible memory of 256 bits, organized in eight blocks, and an optimized command set available in five different antenna shapes,.

AWT6243 : WCDMA Power Amplifiers The AWT6243 HELP3TM PA is a next generation WCDMA product for UMTS handsets. This PA incorporates ANADIGICS’ HELP3TM technology to provide low power consumption without the need for an external voltage regulator or DC/DC Converter. The AWT6243 is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability,.

ADF7021-V : High Performance, Narrow-Band Transceiver IC The ADF7021-V is a high performance, low power, narrow-band RF transceiver based on the ADF7021-N. The architecture of the ADF7021-V transceiver is similar to that of the ADF7021-N except that an external VCO is used by the on-chip RF synthesizer for applications that require improved phase noise performance.

LTC5591 : Dual 1.3GHz To 2.3GHz High Dynamic Range Downconverting Mixer The LTC®5591 is part of a family of dual-channel high dynamic range, high gain downconverting mixers covering the 600MHz to 4.5GHz RF frequency range. The LTC5591 is optimized for 1.3GHz to 2.3GHz RF applications. The LO frequency must fall within the 1.4GHz to 2.1GHz range for optimum performance.

0-C     D-L     M-R     S-Z