|Category||RF & Microwaves => GaAs MMIC Chips|
|Title||GaAs MMIC Chips|
|Description||Wideband Devices, 2 GHZ to 24 GHZ|
|Datasheet||Download CMM0014-BD datasheet
Advanced Product Information April 2003 Features Small Size: x 92 mils High Gain Directly Cascadable Medium Power: +23 dBm Ion-Implanted Active Layers Silicon Nitride Passivation
Frequency Range Small Signal Gain Flatness Input/Output VSWR Power Output (@1 dB Gain Compression) Second Order Intercept Point Third Order Intercept Point Current
Die Attach: Eutectic die attach is recommended. For eutectic die attach: Preform: AuSn (80% Au, 20% Sn); Stage Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1 min or less. Wire Bonding: Wire Size: to 1.0 mil in diameter (prestressed); Thermocompression bonding is preferred over thermosonic bonding. For thermocompression bonding: Stage Temperature: 250°C; Bond Tip Temperature: 150°C; Bonding Tip Pressure: to 40 gms depending on size of wire.
Drain Voltage Drain Current Continuous Power Dissipation Channel Temperature Storage Temperature Mounting Temperature Input Power
The CMM-0014-BD is available in bare die and is shipped in Gel Pak. Part Number for Ordering Package CMM0014-BD Bare Die
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