Details, datasheet, quote on part number: 2N956
Part2N956
CategoryDiscrete
DescriptionGeneral Purpose Transistor ( NPN Silicon )
CompanyBoca Semiconductor
DatasheetDownload 2N956 datasheet
Quote
Find where to buy
 
  
Some Part number from the same manufacture Boca Semiconductor
BC556 65 V, PNP Silicon Planar Epitaxial Transistor
BC556A
BC556B
BC557 45 V, PNP Silicon Planar Epitaxial Transistor
BC557A
BC557B
BC557C
BC558 30 V, PNP Silicon Planar Epitaxial Transistor
BC558A
BC558B
BC558C
BD905 45 V, Complementary NPN Silicon Power Transistor
BD906 45 V, Complementary PNP Silicon Power Transistor
BD907 60 V, Complementary NPN Silicon Power Transistor
BD908 60 V, Complementary PNP Silicon Power Transistor
BD909 80 V, Complementary NPN Silicon Power Transistor
BD910 80 V, Complementary PNP Silicon Power Transistor
BD911 100 V, Complementary NPN Silicon Power Transistor
BD912 100 V, Complementary PNP Silicon Power Transistor
BU126 300 V, NPN Silicon Power Transistor
BU204 General Purpose Transistor

2N3636 : PNP Silicon General Purpose Transistor

2N6314 : 80V Complementary PNP Silicon Power Transistor

2N6738 : 450 V, NPN Silicon Power Transistor

BC556A : 65 V, PNP Silicon Planar Epitaxial Transistor

BU406D : 200 V, NPN Silicon Power Transistor

BUX85 : General Purpose Transistor

D44H1 : General Purpose Transistor

MC78L08AD : 3-terminal 0.1a Negative Voltage Regulators

MJ10007 : 500 V, NPN Silicon Power Darlington Transistor

MJ2955 : Complementary Silicon Power Transistor

Same catergory

2N3584 : 250V Complementary NPN Silicon Power Transistor.

2SC4185 : UHF Oscillator And VHF Mixer NPN Silicon Epitaxial Transistor Super Mini Mold.

APT40GU60JU2 : Boost Chopper. Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 200kHz range - Soft recovery parallel diodes - Low diode VF ISOTOP® Package (SOT-227) Very low stray.

BUK456-100 : Powermos Transistor: 100v, 34/32a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK456 Drain-source voltage Drain current (DC) Total power dissipation.

MC54F174J : Hex D Flip-flop With Master Reset Fast Schottky TTL. The is a high-speed hex D flip-flop. The device is used primarily a 6-bit edge-triggered storage register. The device has a Master Reset to simultaneously clear all flip-flops. The F174 consists of six edge-triggered D flip-flops with individual D inputs and Q outputs. The Clock (CP) and Master Reset (MR) are common to all flip-flops. The state of each.

NDB6030 : Enhancement N-Channel. N-channel Enhancement Mode Field Effect Transistor.

SPI73N03S2L-08 : E.g. OptiMOS®. Feature Enhancement mode Logic Level Excellent Gate Charge x RDS(on) TO262 -3-1 product (FOM) 175°C operating temperature Avalanche rated dv/dt rated Maximum Ratings, = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08.

TD62103P : 7ch Darlington Sink Driver.

PBSS306PZ : PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ..

03028-BX821BKZP : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BX, 0.00082 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 8.20E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.

DBLS201G : 2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 50000 mA ; VBR: 50 volts ; RoHS Compliant: RoHS ; Package: GREEN, PLASTIC, DBLS, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.

DTB743ZMT2L : 200 mA, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: VMT3, 3PIN.

MLL5533B-1 : 13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA. s: Diode Type: VOLTAGE REGULATOR DIODE.

NTJD4101CT1 : 660 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.3850 ohms ; Package Type: CASE 419B-02, SC-88, 6 PIN ; Number of units in IC: 2.

T110A103J035AS : CAPACITOR, TANTALUM, SOLID, POLARIZED, 35 V, 0.01 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrolytic Capacitors: Tantalum ; : Polarized ; Capacitance Range: 0.0100 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 35 volts ; Mounting Style: Through Hole ; Operating Temperature: 85 C (185.

US106CH100D : CAPACITOR, FILM/FOIL, 50 V, 0.01 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Capacitance Range: 0.0100 microF ; WVDC: 50 volts ; Mounting Style: Through Hole ; Operating Temperature: -25 to 85 C (-13 to 185 F).

125SPC015 : 120 A, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: SPD-3, 2 PIN ; Number of Diodes: 1 ; IF: 120000 mA.

2N3348DCSMG4 : 30 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB. s: Polarity: PNP ; Package Type: HERMETIC SEALED, CERAMIC, LCC2-6.

 
0-C     D-L     M-R     S-Z