Details, datasheet, quote on part number: 2N6498
Part2N6498
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description300 V, NPN Silicon Power Transistor
CompanyBoca Semiconductor
DatasheetDownload 2N6498 datasheet
Cross ref.Similar parts: 2N6499, 2SC255
Quote
Find where to buy
 
  
Some Part number from the same manufacture Boca Semiconductor
2N6499 350 V, NPN Silicon Power Transistor
2N6542 300 V, NPN Silicon Power Transistor
2N6543 400 V, NPN Silicon Power Transistor
2N6546 300 V, NPN Silicon Power Transistor
2N6547 400 V, NPN Silicon Power Transistor
2N6564 300 V, Silicon Controlled Rectifier
2N6565 400 V, Silicon Controlled Rectifier
2N6594 300 V, PNP Silicon Power Transistor
2N6609 140V Complementary PNP Silicon Power Transistor
2N6666 40 V, Darlington PNP Silicon Power Transistor
2N6667 60 V, Darlington PNP Silicon Power Transistor
2N6668 80 V, Darlington PNP Silicon Power Transistor
2N6676 450 V, NPN Silicon Power Transistor
2N6677 550 V, NPN Silicon Power Transistor
2N6678 650 V, NPN Silicon Power Transistor
2N6714 30 V, NPN Silicon Planar Epitaxial Transistor
2N6715 40 V, NPN Silicon Planar Epitaxial Transistor
2N6716 60 V, NPN Silicon Planar Epitaxial Transistor
2N6738 450 V, NPN Silicon Power Transistor
2N6739 550 V, NPN Silicon Power Transistor
2N6740 650 V, NPN Silicon Power Transistor

2N3019 : General Transistor

2N3439 : NPN High Voltage Amplifier

2N3790 : 80V PNP Silicon Power Transistor

2N4032 : 60V PNP Silicon General Purpose Transistor

2N4871 : Unijunction Silicon Unijunction Transistor

2N5880 : 80 V, Complementary PNP Selicon High-power Transistor

2N5884 : 80 V, Complementary PNP Selicon High-power Transistor

MC78L09AD : 3-terminal 0.1a Negative Voltage Regulators

MJ10004 : 450 V, NPN Silicon Power Darlington Transistor

Same catergory

2SK3174A : . Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

ASI10607 : NPN Silicon RF Power Transistor.

BSV16-6 : PNP Silicon Planar Transistors.

FMQ-G2FLS : . ) is with Half-cycle Sinewave Heatsink Single Shot (=I F) 90% Recovery Point (ex. =100mA/100mA 90% Recovery Point) F) 75% Recovery Point (ex. =100mA/200mA 75% Recovery Point) .

KBU1003G : Glass Passivated. Pakage = Kbu ;; Max. Reverse Voltage VRM (V)= 200 ;; Max. Aver. Rect. Current io (A)= 10 ;; Ifsm (A)= 200.

MMBTA92LT1 : Small Signal High Voltage-PNP, Package: SOT-23 (TO-236), Pins=3. Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Collector Current ­ Continuous Symbol VCEO VCBO VEBO IC MMBTA92 Unit Vdc mAdc = 2D CASE 318­08, STYLE SOT­23 (TO­236AF) Symbol PD Max 225 1.8 RqJA 300 2.4 RqJA TJ, Tstg to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 2 EMITTER 1 BASE COLLECTOR 3 Characteristic Total Device Dissipation.

NTE36 : Silicon Complementary Transistors af Power Amplifier, High Current Switch.

SB560 : Wafer. Schottky Wafer, 5A60V 72mil. General : 5 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage 5 Amperes,Ta=25°C Maximum Instantaneous Reverse Voltage VR= 60 Volt, Ta=25°C Maximum Junction Capacitance 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current.

SPI11N60S5 : For Lowest Conduction Losses. Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Maximum Ratings, = 25°C, unless otherwise specified Parameter Continuous drain current Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse Avalanche current,.

UPA813T : NPN Silicon Epitaxial Transistor With Built-in 2 X 2sc4570 Small Mini Mold.

BKME100EBC101MF11D : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, NON-POLARIZED, 10 V, 100 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 60 microamps ; Mounting Style: Through Hole ; Operating Temperature: -55 to 105 C (-67.

CY85-E2GA152MYGS : CAPACITOR, CERAMIC, 440 V, E, 0.0015 uF. s: Dielectric: Ceramic Composition ; Capacitance Range: 0.0015 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 440 volts ; Operating Temperature: -13 to 257 F (248 to 398 K).

EPB5035G-RC : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.

KTA1023O : 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92. s: Polarity: PNP ; Package Type: TO-92, TO-92L, 3 PIN.

LTR10EVHF0.0475OHM : RESISTOR, METAL GLAZE/THICK FILM, 0.5 W, 1 %, 150 ppm, 0.0475 ohm, SURFACE MOUNT, 0805. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0805, CHIP ; Resistance Range: 0.0475 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 150 ±ppm/°C ; Power Rating:.

NL08MTC1R0 : 1 ELEMENT, 1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Application: General Purpose, RF Choke ; Inductance Range: 1 microH ; Rated DC Current: 700 milliamps ; Operating Temperature: -25 to 85 C (-13 to 185 F).

PSP500KB-0R1 : RESISTOR, WIRE WOUND, 5 W, 10 %, 400 ppm, 0.1 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 0.1000 ohms ; Tolerance: 10 +/- % ; Temperature Coefficient: 400 ±ppm/°C ; Power Rating: 5 watts (0.0067 HP) ; Operating.

R6015ANZ : POWER, FET.

S1D-TP : 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AA. s: Package: SMB, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN ; Number of Diodes: 1 ; IF: 1000 mA ; RoHS Compliant: RoHS.

30SLJQ060PBF : 30 A, 60 V, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN ; Number of Diodes: 1 ; VRRM: 60 volts ; IF: 30000 mA ; RoHS Compliant: RoHS.

 
0-C     D-L     M-R     S-Z