Details, datasheet, quote on part number: AM29F040-70JE
PartAM29F040-70JE
CategoryMemory => Flash
Description4 Megabit ( 524,288 X 8-bit ) CMOS 5.0 Volt-only, Sector Erase Flash Memory
CompanyAdvanced Micro Devices, Inc.
DatasheetDownload AM29F040-70JE datasheet
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Features, Applications

4 Megabit x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

10% for read and write operations Minimizes system level power requirements s Compatible with JEDEC-standards Pinout and software compatible with singlepower-supply Flash Superior inadvertent write protection s Package options 32-pin PLCC 32-pin TSOP 32-pin PDIP s Minimum 100,000 write/erase cycles guaranteed s High performance 55 ns maximum access time s Sector erase architecture Uniform sectors of 64 Kbytes each Any combination of sectors can be erased. Also supports full chip erase. s Sector protection Hardware method that disables any combination of sectors from write or erase operations s Embedded Erase Algorithms Automatically preprograms and erases the chip or any combination of sectors s Embedded Program Algorithms Automatically programs and verifies data at specified address s Data Polling and Toggle Bit feature for detection of program or erase cycle completion s Erase suspend/resume Supports reading data from a sector not being erased s Low power consumption 20 mA typical active read current 30 mA typical program/erase current s Enhanced power management for standby mode <1 A typical standby current Standard access time from standby mode

The a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each. The Am29F040 is offered a 32-pin package. This device is designed to be programmed in-system with the standard system V CC supply. PP is not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard Am29F040 offers access times between 55 ns and 150 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE) and output enable (OE) controls. The Am29F040 is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 Volt Flash or EPROM devices. The Am29F040 is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Typically, each sector can be programmed and verified in less than one second. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.

Any individual sector is typically erased and verified in 1.0 seconds (if already completely preprogrammed). This device also features a sector erase architecture. The sector mode allows for 64K byte blocks of memory to be erased and reprogrammed without affecting other blocks. The Am29F040 is erased when shipped from the factory. The device features single 5.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling or by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the device internally resets to the read mode. AMD's Flash technology combines years of EPROM and E2PROM experience to produce the highest levels of quality, reliability and cost effectiveness. The Am29F040 memory electrically erases the entire chip or all bits within a sector simultaneously via FowlerNordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection.

s Eight 64 Kbyte sectors s Individual-sector, multiple-sector, or bulk-erase capability s Individual or multiple-sector protection is user definable

State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic STB Data Latch

 

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