Details, datasheet, quote on part number: BUK959-60
DatasheetDownload BUK959-60 datasheet


Features, Applications

PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes

Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection to 2kV and active drain voltage clamping. Temperature sensitive diodes are incorporated for monitoring chip temperature. The device is intended for use in automotive and general purpose switching applications.

SYMBOL V(CL)DSR ID Ptot Tj RDS(ON) VF -SF PARAMETER Drain-source clamp voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS 5 V Forward voltage,temperature sense diodes Negative temperature coefficient, temperature sense diodes MIN. 40 TYP. 45 MAX. UNIT m mV mV/K

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDG VGS ID IDM Ptot IGD IGS VTS Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Drain-gate clamp current Gate-source clamp current Source T1/T2 voltage Storage temperature Junction temperature CONDITIONS continuous Tmb 25 C Tmb 100 C Tmb 140 C Tmb 25 C Tmb C 5ms pulse; 0.01 5ms pulse; = 0.01 MIN. MAX. UNIT V C

PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes
Electrostatic discharge voltage, Human body model (100pF,1.5K) pins 1,3,5

SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. minimum footprint, FR4 board TYP. 50 MAX. 1.29 UNIT K/W

25 C unless otherwise specified SYMBOL V(BR)DG VGS(TO) IDSS IGSS V(BR)GSS RDS(ON) VF -SF VHYS PARAMETER Drain-gate zener voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current CONDITIONS < 175C VDS = VGS; = 1 mA; = -55C VDS +35 V; VGS =175 C VDS +15 V; VGS =175 C MIN. TYP. MAX. UNIT A mV mV/K mV

VGS 5 V; VDS =175 C Gate source breakdown voltage 1 mA; Drain-source on-state resistance Forward voltage, temperature sense diodes Negative temperature coefficient, temperature sense diodes from 140 C Forward voltage hysteresis; temperature sense diodes VGS = 250 uA; to 250uA

25 C unless otherwise specified SYMBOL V(CL)DSR gfs Ciss Coss Crss tr td off Ld Ls PARAMETER Drain source clamp voltage (peak value) Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS < 175C VDS 10 A VGS 0 V; VDS = 1 MHz MIN. 40 20 TYP. MAX. UNIT s nH

Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad

25 C unless otherwise specified SYMBOL IDR IDRM VSD PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage CONDITIONS A ; VGS A ; VGS 0 V MIN. TYP. 0.95 1 MAX. 208 1.2 UNIT

SYMBOL WDSRS PARAMETER Non-repetitive drain-source clamped inductive turn off energy CONDITIONS = 25C prior to clamping; 20 A; VDD 16 V; VGS 10 k; inductive load MIN. MAX. 450 UNIT mJ


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