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Features, Applications

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology, featuring very low on-state resistance. Product availability: in SOT428 (D-PAK).

TrenchMOSTM technology Q101 compliant 175 C rated Logic level compatible.

s Automotive and general purpose power switching: 12 V and 24 V loads x Motors, lamps and solenoids.

Table 1: Pin 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g)
drain (d) source (s) mounting base; connected to drain (d)

Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 C; VGS 5 V Tmb 25 C VGS 25 A VGS 25 A Typ Max Unit W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter

Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) non-repetitive gate-source voltage drain current (DC) 50 s Tmb = 25 C; VGS 5 V; Figure 2 and 3 Tmb = 100 C; VGS 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb 25 C Tmb = 25 C; pulsed; 10 s unclamped inductive load; 25 A; VDS 100 V; VGS 5 V; RGS 50 ; starting 25 C Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1

Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.


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