Details, datasheet, quote on part number: BUK759-60
DatasheetDownload BUK759-60 datasheet


Features, Applications

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.

SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS 10 V MAX. UNIT C m

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS 20 k Tmb 25 C Tmb 100 C Tmb 25 C Tmb 25 C MIN. - 55 MAX. UNIT C

SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS Minimum footprint, FR4 board TYP. 50 MAX. 0.65 UNIT K/W

Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0.25 mA; = -55C VDS = VGS; = -55C VDS 30 V; VGS 0 V; VGS 20 V; VDS 0 V VGS = 175C MIN.

Tmb = 25C unless otherwise specified SYMBOL Ciss Coss Crss tr td off Ld Ls PARAMETER Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VGS 0 V; VDS = 1 MHz MIN. TYP. MAX. UNIT ns nH

Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad

= 25C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. 25 A; VGS 75 A; VGS 75 A; -dIF/dt = 100 A/s; VGS 30 V TYP. MAX. 240 1.2 UNIT ns C

SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS 75 A; VDD 25 V; VGS 10 V; RGS 50 ; Tmb 25 C MIN. -

Fig.3. Safe operating area. Tmb ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.2. Normalised continuous drain current. ID% C = f(Tmb); conditions: VGS 5 V
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T


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