Details, datasheet, quote on part number: CL21B105KBFVPNE
PartCL21B105KBFVPNE
Category
TitleCAP CER 1UF 50V X7R 0805
Description
CompanySamsung Electronics Co., Ltd.
 
Quote
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Others parts numbering
CL31B475KBHVPNE: CAP CER 4.7UF 50V X7R 1206
CL31B106KAHVPNE: CAP CER 10UF 25V X7R 1206
CL05B102KB5VPNC: CAP CER 1000PF 50V X7R 0402
CL05B103KA5VPNC: CAP CER 10000PF 25V X7R 0402
CL10B222KB8WPNC: CAP CER 2200PF 50V X7R 0603
CL05B103KB5VPNC: CAP CER 10000PF 50V X7R 0402
CL10B332KB8WPNC: CAP CER 3300PF 50V X7R 0603
CL10B221KB8WPNC: CAP CER 220PF 50V X7R 0603
CL10B223KB8WPNC: CAP CER 0.022UF 50V X7R 0603
CL05B333KO5VPNC: CAP CER 0.033UF 16V X7R 0402
CL10B103KB8WPNC: CAP CER 10000PF 50V X7R 0603
CL05B223KB5VPNC: CAP CER 0.022UF 50V X7R 0402
CL10B221KC8WPNC: CAP CER 220PF 100V X7R 0603
CL10C471JB81PNL: CAP CER 470PF 50V C0G/NP0 0603
CL10B103KC8WPNC: CAP CER 10000PF 100V X7R 0603
CL21B102KB6WPNC: CAP CER 1000PF 50V X7R 0805
CL10C6R8DB81PNC: CAP CER 6.8PF 50V C0G/NP0 0603
CL10B391KC8WPNC: CAP CER 390PF 100V X7R 0603
CL21B473KBCWPNC: CAP CER 0.047UF 50V X7R 0805
Some Part number from the same manufacture Samsung Electronics Co., Ltd.
CL31B475KBHVPNE
CL31B106KAHVPNE
CL05B102KB5VPNC
CL05B103KA5VPNC
CL10B222KB8WPNC
CL05B103KB5VPNC
CL10B332KB8WPNC
CL10B221KB8WPNC
CL10B223KB8WPNC
CL05B333KO5VPNC
CL10B103KB8WPNC
CL05B223KB5VPNC
CL10B221KC8WPNC
CL10C471JB81PNL
CL10B103KC8WPNC
CL21B102KB6WPNC
CL10C6R8DB81PNC
CL10B391KC8WPNC
CL21B473KBCWPNC

K4S641632F-TC75 : Description = K4S641632F 1M X 16Bit X 4 Banks Synchronous DRAM ;; Organization = 4Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 50,55,60,70,75 ;; Package = 54TSOP2 ;; Power = C,l ;; Production Status = Mass Production ;; Comments = -

K7M163625M : NtRAM(FT & PP) Description = K7M163625M 512Kx36 Flow-through NtRAM™ ;; Organization = 512Kx36 ;; Operating Mode = FT(SB) ;; VDD(V) = 3.3 ;; Access Time-tCD(ns) = 7.5,8.5,9.0 ;; Speed-tcyc (MHz) = 100,100,83 ;; I/o Voltage(V) = 2.5,3.3 ;; Package = 100TQFP,119BGA ;; Production Status = Eol ;; Comments = -

K9K1G08U0A-YCB0 : 1G bit Description = K9K1G08U0A 128M X 8 Bit NAND Flash Memory ;; Organization = 128Mx8 ;; Operating Voltage(V) = 2.7~3.6 ;; Temperature = C,i ;; Speed(ns) = 50 ;; Package = 48TSOP1,48WSOP1,63FBGA ;; Production Status = Mass Production ;; Comments = 0.12um,Dual Die(512Mb*2)

KM68V4002BLI-10 : -> Fast SRAM Description = KM68V4002B 512K X 8 Bit High Speed CMOS Static RAM(3.3V Operating) ;; Organization = 512Kx8 ;; Vcc(V) = 3.3 ;; Speed-tAA(ns) = 10,12,15 ;; Operating Temperature = C,i ;; Operating Current(mA) = 205 ;; Standby Current(mA) = 10/1.2 ;; Package = 36SOJ,36TSOP2,44TSOP2 ;; Production Status

M381L2923BTM-CLA2 : Description = M381L2923BTM 184Pin Unbuffered Dimm Based on 512Mb B-die (x8, X16) ;; Density(MB) = 1024 ;; Organization = 128Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = CC,C4,B3,AA,A2,B0 ;; #of Pin = 184 ;; Power = C,l ;; Component Composition = (64Mx8)x18 ;; Production Status

S1T8528X01 : Description = S1T8528X01 ENHANCED-1 Chip CT0 RF ic ;; Function = Enhanced(1Chip CT0 RF IC) ;; Features = Operating Voltage(2 to 5.5V,Built-in Dual Conversion Receiver,pll And Compander,built-in Low Battery Detector,built-in Speaker Amp,programmable Speaker Amp Volume Control And Carrier Detector) ;;

K4H511638C : DDR SDRAM 512Mb C-die (x4, x8, x16) The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s p

M368L5623MTN-CB0 : DDR Sdram Unbuffered Module

CL10X225KA8NQND : CAPACITOR, CERAMIC, MULTILAYER, 25 V, X6S, 2.2 uF, SURFACE MOUNT, 0603 Specifications: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 2.2 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mo

K4H560838E-VLB00 : 32M X 8 DDR DRAM, 0.75 ns, PBGA60 Specifications: Memory Category: DRAM Chip ; Density: 268435 kbits ; Number of Words: 32000 k ; Bits per Word: 8 bits ; Package Type: FBGA-60 ; Pins: 60 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 0.7500 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

K8S2815ETE-DC7B0 : 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 Specifications: Memory Category: Flash, PROM ; Density: 134218 kbits ; Number of Words: 8000 k ; Bits per Word: 16 bits ; Package Type: 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Access Time: 70 ns ; Operating Temperature:

K8S5615EZC-FE1C0 : 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA44 Specifications: Memory Category: Flash, PROM ; Density: 268435 kbits ; Number of Words: 16000 k ; Bits per Word: 16 bits ; Package Type: 7.70 X 6.20 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Access Time: 100 ns ; Operating Temperature

 
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