Details, datasheet, quote on part number: BF1205
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionDual N-channel Dual Gate MOS-FET
CompanyPhilips Semiconductors (Acquired by NXP)
DatasheetDownload BF1205 datasheet
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PackagesSOT363 (UMT6)


Features, Applications

FEATURES Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias Internal switch reduces the number of external components Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners and professional communications equipment. DESCRIPTION The is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in SOT363 micro-miniature plastic package. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BF1205 - DESCRIPTION Plastic surface mounted package; 6 leads

PINNING - SOT363 PIN gate 1 (a) gate 2 gate 1 (b) drain (b) source drain (a) DESCRIPTION

Per MOS-FET; unless otherwise specified VDS ID Ptot yfs Cig1-ss Crss NF Xmod drain-source voltage drain current (DC) total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure cross-modulation Ts 102 ░C; temperature at the soldering point of the source lead 12 mA amp. = 1 MHz amp. = 1 MHz = 1 MHz amp. = 800 MHz amp. = 800 MHz amp. a: input level for 40 dB AGC amp. b: input level for 40 dB AGC Tj junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS Ts 102 ░C; note -65 - MIN. MAX. UNIT fF dB dBÁV ░C

Per MOS-FET; unless otherwise specified VDS IG1 IG2 Ptot Tstg Tj Note Ts is the temperature at the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 240 UNIT K/W drain-source voltage drain current (DC) gate 1 current gate 2 current total power dissipation storage temperature junction temperature mW ░C


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